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JMnic
Product Specification
Silicon PNP Power Transistors
2SA1659 2SA1659A
DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL PARAMETER 2SA1659 VCBO Collector-base voltage 2SA1659A 2SA1659 VCEO Collector-emitter voltage 2SA1659A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -180 -5 -1.5 -0.15 20 150 -55~150 ae ae V A A W Open emitter -180 -160 V CONDITIONS VALUE -160 V UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SA1659 V(BR)CEO Collector-emitter breakdown voltage 2SA1659A VCEsat VBE ICBO IEBO hFE fT COB Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance IC=-0.5A;IB=-50mA IC=-0.5A ; VCE=-5V VCB=-160V;IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.1A ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz IC=10mA ; IB=0 CONDITIONS
2SA1659 2SA1659A
SYMBOL
MIN -160
TYP.
MAX
UNIT
V -180 -1.5 -1.0 -1 -1 70 100 30 240 MHz pF |I |I V V A A
hFE classifications O 70-140 Y 120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1659 2SA1659A
Fig.2 Outline dimensions
3

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